Search results for "Metal insulator"
showing 4 items of 4 documents
Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions
2014
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ of the TaN$_{x} $ film at $\sim 5$ K down to $\sim$ 0.5 K. Numerical simulations were also performe…
Tunable Optical Antennas Using Vanadium Dioxide Metal-Insulator Phase Transitions
2019
Here, we investigate the possibility of exploiting the insulator-to-metal transition in vanadium dioxide (VO2) to tune and optically control the resonances of dipole nanoantennas in the visible near-infrared region. We compare the results obtained in the case of antennas completely made by VO2 with those of previous works and highlight the key role of the substrate to perform dynamical tuning. We also present a highly efficient configuration composed of dipole gold antenna loaded with VO2 and give some general guidelines to optimally exploit phase transitions to tune nanodevices.
Size dependent light absorption modulation and enhanced carrier transport in germanium quantum dots devices
2015
Quantum confinement in closely packed arrays of Ge quantum dots (QDs) was studied for energy applications. In this work, we report an efficient tuning mechanism of the light harvesting and detection of Ge QDs. Thin films of SiGeO alloys, produced by rf-magnetron sputtering, were annealed at 600 degrees C in N-2 to induce precipitation of small amorphous Ge QDs into the oxide matrix. Varying the Ge content, the QD size was tailored between 2 and 4 nm, as measured by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy (XPS) measurements indicate the formation of pure SiO2, as well as the presence of a sub-stoichiometric Ge oxide shell at the QD interface. Light …
Efficient Peltier refrigeration by a pair of normal metal/ insulator/superconductor junctions
1995
We suggest and demonstrate in experiment that two normal metal /insulator/ superconductor (NIS) tunnel junctions combined in series to form a symmetric SINIS structure can operate as an efficient Peltier refrigerator. Specifically, it is shown that the SINIS structure with normal-state junction resistances 1.0 and 1.1 k$\Omega$ is capable of reaching a temperature of about 100 mK starting from 300 mK. We estimate the corresponding cooling power to be 1.5 pW per total junction area of 0.8 $\mu$m$^2$ at $T= 300$ mK.